SPECIFICATIONS
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Essentials
Status
EOIS
Launch Date
Q3'08
Sequential Read
250 MB/s
Sequential Write
70 MB/s
Random Read (8GB Span)
35000 IOPS
Random Read (100% Span)
35000 IOPS
Random Write (8GB Span)
3300 IOPS
Random Write (100% Span)
350 IOPS
Latency - Read
85 µs
Latency - Write
115 µs
Power - Active
150 mw (MobileMark 2007 Workload), 2.5 W (64K Sequential Write)
Power - Idle
60 mw (DIPM), .06 W (Non-DIPM)
Vibration - Operating
2.17 GRMS (7-800 Hz)
Vibration - Non-Operating
3.13 GRMS (10-500 Hz)
Shock (Operating and Non-Operating)
1,000 G/.5 msec
Operating Temperature
0 - 70 C
Weight
35 ± 2 grams
Mean Time Between Failures (MTBF)
1,200,000 Hours
Uncorrectable Bit Error Rate (UBER)
1 sector per 1015
Recommended Customer Price
N/A
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Package Specifications
Components
Intel NAND Flash Memory Multi-Level Cell (MLC) Technology
Capacity
80 GB
Form Factor
1.8 inch microSATA
Interface
SATA - 3.0 Gb/s
Lithography
50 nm
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Advanced Technologies
Enhanced Power Loss Data Protection
No
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